DIODE GEN PURP 300V 1A DO213AB
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, Superectifier® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 300 V |
Capacitance @ Vr, F: | 14pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
JAN1N5418Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 3A AXIAL |
|
VS-150UR60DVishay General Semiconductor – Diodes Division |
DIODE GP 600V 150A DO-8 |
|
USD245Roving Networks / Microchip Technology |
RECTIFIER |
|
S85GRGeneSiC Semiconductor |
DIODE GEN PURP REV 400V 85A DO5 |
|
RN 1ZVSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1.5A AXIAL |
|
MURH10020GeneSiC Semiconductor |
DIODE GEN PURP 200V 100A D-67 |
|
CRG05(TE85L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 800V 1A S-FLAT |
|
R5001415XXWAPowerex, Inc. |
DIODE GEN PURP 1.4KV 150A DO205 |
|
DPG30I600PMWickmann / Littelfuse |
POWER DIODE DISCRETES-FRED TO-22 |
|
LSM1100G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 1A 100V SMBG |
|
1N1201BRRoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
1N4458Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 15A DO203AA |
|
S70GGeneSiC Semiconductor |
DIODE GEN PURP 400V 70A DO5 |