DIODE GEN PURP 4KV 8A MODULE
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 4000 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 4 V @ 6 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2 µs |
Current - Reverse Leakage @ Vr: | 2 µA @ 4000 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | - |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N3289Roving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
VS-45EPF06L-M3Vishay General Semiconductor – Diodes Division |
RECTIFIER DIODE 45A 600V TO-247A |
|
EM 1ZSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1A AXIAL |
|
UPS170E3/TR7Roving Networks / Microchip Technology |
DIODE SCHOTTKY 1A 70V POWERMITE |
|
UFT3015Roving Networks / Microchip Technology |
RECTIFIER |
|
A451PNPowerex, Inc. |
DIODE GP 1.8KV 2500A DO200AC |
|
RS5J-T M6GTSC (Taiwan Semiconductor) |
250NS, 5A, 600V, FAST RECOVERY R |
|
BYV26EEIC Semiconductor, Inc. |
DIODE AVALANCHE 1000V 1A DO41 |
|
CMS15I40A(TE12L,QMToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 40V 1.5A M-FLAT |
|
R3520Roving Networks / Microchip Technology |
RECTIFIER |
|
R5021013LSWAPowerex, Inc. |
DIODE GEN PURP 1KV 125A DO205 |
|
S2G-HFComchip Technology |
RECTIFIER GEN PURP 400V 2A SMA |
|
BAS316/DG/B4115Rochester Electronics |
BAS316 - RECTIFIER DIODE |