CBL ASSY 4POS M TO WIRE SHD 5M
DIODE GEN PURP 1.2KV 7.5A WAFER
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 7.5A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.97 V @ 7.5 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 27 µA @ 1200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Sawn on foil |
Operating Temperature - Junction: | -40°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N4044RPowerex, Inc. |
DIODE GEN PURP 50V 275A DO205AB |
|
1N7049-1Roving Networks / Microchip Technology |
SCHOTTKY RECTIFIER |
|
VS-80PFR160WVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 80A DO203AB |
|
RS3JC-HFComchip Technology |
RECTIFIER FAST RECOVERY 600V 3A |
|
R6030622PSYAPowerex, Inc. |
DIODE GEN PURP 600V 220A DO205AB |
|
1N3261RPowerex, Inc. |
DIODE GEN PURP 100V 160A DO205AB |
|
1N3173RPowerex, Inc. |
DIODE STUD MNT 240A 900V DO-9 |
|
BYG20GHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.5A DO214 |
|
SR1502 R0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 15A R-6 |
|
F1T3G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A TS-1 |
|
SHV-06JV1Sanken Electric Co., Ltd. |
IC RECT DIODE HV AXIAL |
|
1N5827RGeneSiC Semiconductor |
DIODE SCHOTTKY REV 30V DO5 |
|
UES2603RRoving Networks / Microchip Technology |
RECTIFIER |