ERC-50 49.9K 1% T-1 RNC50K4992FR
DIODE GEN PURPOSE
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500/609 |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50 V |
Current - Average Rectified (Io): | 300mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 200 mA |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 5 ns |
Current - Reverse Leakage @ Vr: | 100 nA @ 50 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | D, SQ-MELF |
Supplier Device Package: | D-5D |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UCQ30A03KYOCERA Corporation |
DIODE SCHOTTKY 30V 30A TO-263LP |
|
CBS10F40,L3FToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 40V 1A CST2B |
|
R6010630XXYAPowerex, Inc. |
RECTIFIER STUD MOUNT REVERSE DO- |
|
1T6G A1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A TS-1 |
|
RS3DC-HFComchip Technology |
RECTIFIER FAST RECOVERY 200V 3A |
|
BYG20GHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.5A DO214 |
|
MBR2080FCTE3/TURoving Networks / Microchip Technology |
DIODE SCHOTTKY 20A 80V ITO220AB |
|
1T2G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A TS-1 |
|
BY133T/REIC Semiconductor, Inc. |
DIODE GEN PURP 1300V 1A DO41 |
|
SMBD1511LT3Rochester Electronics |
SS SOT23 SWCH DIO SPCL |
|
VS-42HFR140Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.4KV 40A DO203AB |
|
S2J-HFComchip Technology |
RECTIFIER GEN PURP 600V 2A SMA |
|
RURD820156Rochester Electronics |
RECTIFIER DIODE, 8A, 200V |