DIODE GEN PURP 800V 100A DO205AA
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 100A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 100 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 20 mA @ 800 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-205AA, DO-8, Stud |
Supplier Device Package: | DO-205AA (DO-8) |
Operating Temperature - Junction: | -40°C ~ 200°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RX 10ZVSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 2A AXIAL |
|
FCF10A20KYOCERA Corporation |
DIODE FAST RECOVERY 200V 10A TO- |
|
FR12D05GeneSiC Semiconductor |
DIODE GEN PURP 200V 12A DO4 |
|
BYM12-200HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
|
VS-65EPS08L-M3Vishay General Semiconductor – Diodes Division |
NEW INPUT DIODES - TO-247 |
|
S3MB-HFComchip Technology |
RECTIFIER GEN PURP 1000V 3A SMB |
|
R5021210RSWAPowerex, Inc. |
DIODE GEN PURP 1.2KV 100A DO205 |
|
ES2BWF-HFComchip Technology |
RECTIFIER SUPER FAST RECOVERY 10 |
|
ES3JB-HFComchip Technology |
RECTIFIER SUPER FAST RECOVERY 60 |
|
DWC010-TE-ERochester Electronics |
SILICON EPITAXIAL PLANAR |
|
VS-150UR80DLVishay General Semiconductor – Diodes Division |
DIODE GP 800V 150A DO-8 |
|
LL5818 L0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A MELF |
|
V15PM6HM3/IVishay General Semiconductor – Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |