POWER DIODE DISCRETES-SONIC ISOP
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 4500 V |
Current - Average Rectified (Io): | 43A |
Voltage - Forward (Vf) (Max) @ If: | 3 V @ 50 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.45 µs |
Current - Reverse Leakage @ Vr: | 100 µA @ 4500 V |
Capacitance @ Vr, F: | 13pF @ 1.8kV, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | ISOPLUS264™ |
Supplier Device Package: | ISOPLUS264™ |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
S70KGeneSiC Semiconductor |
DIODE GEN PURP 800V 70A DO5 |
![]() |
EGL34DHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 500MA DO213 |
![]() |
US1JWF-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 60 |
![]() |
HER307GT-GComchip Technology |
DIODE GEN PURP 800V 3A DO201AA |
![]() |
VS-MURB820-1HM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO-262 |
![]() |
R6201630XXOOPowerex, Inc. |
DIODE GP 1.6KV 300A DO200AA R62 |
![]() |
VS-42HF140Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.4KV 40A DO203AB |
![]() |
S306100Roving Networks / Microchip Technology |
RECTIFIER |
![]() |
FDH333_QRochester Electronics |
RECTIFIER, SCHOTTKY, SILICON |
![]() |
RH 1ZVSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 600MA AXIAL |
![]() |
R6031025HSYAPowerex, Inc. |
DIODE GEN PURP 1KV 250A DO205 |
![]() |
EU 1V1Sanken Electric Co., Ltd. |
DIODE GEN PURP 400V 250MA AXIAL |
![]() |
JAN1N6625Roving Networks / Microchip Technology |
DIODE GEN PURP 1KV 1A AXIAL |