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B-0625CC0625-0250XC

B-0625CC0625-0250XC

RF SHIELD 0.625" X 0.625" COVER

WNSC201200WQ

WNSC201200WQ

SILICON CARBIDE POWER DIODE

WNSC201200WQ

WNSC201200WQ

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Part No :

WNSC201200WQ

Manufacturer
WeEn Semiconductors Co., Ltd
Description
SILICON CARBIDE POWER DIODE
Catalog
Diodes - Rectifiers - Single
Availability
11179 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
Type Description
Series:-
Package:Tube
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 20 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:220 µA @ 1200 V
Capacitance @ Vr, F:1.02nF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:175°C (Max)
WNSC201200WQ is available at GangBo-ic.com, Please review product page below for detailed information, including WNSC201200WQ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for WNSC201200WQ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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