DIODE GEN PURP 1KV 600A DO200AB
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 600A |
Voltage - Forward (Vf) (Max) @ If: | 2.15 V @ 1500 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 7 µs |
Current - Reverse Leakage @ Vr: | 50 mA @ 1000 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis Mount |
Package / Case: | DO-200AB, B-PUK |
Supplier Device Package: | DO-200AB, B-PUK |
Operating Temperature - Junction: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
B345BE-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 45V 3A SMB |
![]() |
DNA30E2200FEWickmann / Littelfuse |
DIODE GEN PURP 2.2KV 30A I4PAC |
![]() |
VS-40HFR120MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 40A DO203AB |
![]() |
1N3891ARRoving Networks / Microchip Technology |
FAST RECOVERY RECTIFIER |
![]() |
SD200SC100A1.TSMC Diode Solutions |
PIV 100V IO 60A CHIP SIZE 200MIL |
![]() |
CUS10I40A(TE85L,QMToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 40V 1A US-FLAT |
![]() |
1N486B TR TIN/LEADCentral Semiconductor |
DIODE GEN PURP 250V 200MA DO35 |
![]() |
1T1G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A TS-1 |
![]() |
DSS6-0025BS-TUBWickmann / Littelfuse |
POWER DIODE DISCRETES-SCHOTTKY T |
![]() |
CUS03(TE85L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 40V 700MA US-FLAT |
![]() |
SCKV66K12Semtech |
DIODE GEN PURP 66KV 1.2A AXIAL |
![]() |
1N4708RLRochester Electronics |
RECTIFIER DIODE |
![]() |
RAS00412XXPowerex, Inc. |
WELDING DIODE, PACKAGED |