RECTIFIER SUPER FAST RECOVERY 10
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 980 mV @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 100 V |
Capacitance @ Vr, F: | 90pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HSC119-NTRF-ERochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
R7001204XXUAPowerex, Inc. |
DIODE GEN PURP 1.2KV 450A DO200 |
|
W3477MC360Wickmann / Littelfuse |
RECTIFIER DIODE |
|
1N1185RRoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
A14PX276Rochester Electronics |
RECTIFIER DIODE |
|
SRT12 A1GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 1A TS-1 |
|
ES3AB-HFComchip Technology |
RECTIFIER SUPER FAST RECOVERY 50 |
|
F1T6G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A TS-1 |
|
S30660Roving Networks / Microchip Technology |
RECTIFIER |
|
VS-50PF80WVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 50A DO203AB |
|
R6030635ESYAPowerex, Inc. |
DIODE GEN PURP 600V 350A DO205AB |
|
B1100AE-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V 1A SMA |
|
F1842D1600Sensata Technologies – Crydom |
DIODE GEN PURP 1.6KV 40A MODULE |