RECTIFIER FAST RECOVERY 800V 3A
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 500 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 800 V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HT12G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A TS-1 |
|
HSM550G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 50V 5A DO215AB |
|
MBR8035RGeneSiC Semiconductor |
DIODE SCHOTTKY REV 35V DO5 |
|
EH 1V1Sanken Electric Co., Ltd. |
DIODE GEN PURP 400V 600MA AXIAL |
|
6A10GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 6A R-6 |
|
R9G03012XXPowerex, Inc. |
DIODE GP 3KV 1200A DO200AA R62 |
|
FR6GR02GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 6A DO4 |
|
1N6306Roving Networks / Microchip Technology |
RECTIFIER DIODE |
|
JAN1N4459RRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 15A DO203AA |
|
1N5286UR-1Roving Networks / Microchip Technology |
CURRENT REGULATOR DIODE |
|
VS-87HF120MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 85A DO203AB |
|
FR70D02GeneSiC Semiconductor |
DIODE GEN PURP 200V 70A DO5 |
|
ACGRC501-GComchip Technology |
AUTOMOTIVE DIODE GEN PURP 50V 5A |