500NS, 1A, 1000V, FAST RECOVERY
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 1A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 500 ns |
Current - Reverse Leakage @ Vr: | 1 µA @ 1000 V |
Capacitance @ Vr, F: | 7pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-221AC, SMA Flat Leads |
Supplier Device Package: | Thin SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
1T1G A1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A TS-1 |
![]() |
1N5231B_NLRochester Electronics |
RECTIFIER DIODE |
![]() |
SMBT1504T3GRochester Electronics |
DIODE STD REC 1.5A 400V SOT23 |
![]() |
1N6097RGeneSiC Semiconductor |
DIODE SCHOTTKY REV 30V DO5 |
![]() |
BYM12-50HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
![]() |
1T5G A1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A TS-1 |
![]() |
1N5401GP-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 100V 3A DO201AD |
![]() |
FR6A02GeneSiC Semiconductor |
DIODE GEN PURP 50V 6A DO4 |
![]() |
ND261N26KHPSA1IR (Infineon Technologies) |
DIODE GP 2.6KV 260A BG-PB50ND-1 |
![]() |
RKH0160AKU#P6Rochester Electronics |
DIODE FOR HIGH VOLTAGE SWITCHING |
![]() |
SS34C-HFComchip Technology |
DIODE SCHOTTKY 3A 40V SMC |
![]() |
JANTXV1N3766Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 35A DO203AB |
![]() |
MUR5005GeneSiC Semiconductor |
DIODE GEN PURP 50V 50A DO5 |