SCHOTTKY RECTIFIER 3A 100V SMP
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, eSMP®, TMBS® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 2.1A |
Voltage - Forward (Vf) (Max) @ If: | 560 mV @ 1.5 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 200 µA @ 100 V |
Capacitance @ Vr, F: | 300pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-220AA |
Supplier Device Package: | DO-220AA (SMP) |
Operating Temperature - Junction: | -40°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BYG24DHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A DO214 |
|
GMA01U-AT1Rochester Electronics |
RECTIFIER DIODE, 0.12A |
|
BYM07-50HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 500MA DO213AA |
|
EGP51D-E3/CVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 5A DO201AD |
|
S1JAL M3GTSC (Taiwan Semiconductor) |
1A, 600V, STANDARD RECOVERY RECT |
|
JTXV1N5811USSemtech |
D MET 6A SFST 150V HRV SM |
|
PMEG3010ESB315Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
FR16GR02GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 16A DO4 |
|
RURG8050Rochester Electronics |
RECTIFIER DIODE |
|
SD125SC150B.T2SMC Diode Solutions |
PIV 150V IO 15A CHIP SIZE 125MIL |
|
VS-SD600N12PCVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 600A B8 |
|
S25DRGeneSiC Semiconductor |
DIODE GEN PURP 200V 25A DO220AA |
|
JANTXV1N3911Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 50A DO5 |