Type | Description |
---|---|
Series: | MILITARY, MIL-PRF-19500/478 |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50 V |
Current - Average Rectified (Io): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 950 mV @ 20 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 50 V |
Capacitance @ Vr, F: | 300pF @ 10V, 1MHz |
Mounting Type: | Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-203AA (DO-4) |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SURD8320T4GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 3A DPAK |
|
UJ3D1210KSUnitedSiC |
1200V 10A SIC SCHOTTKY DIODE G3, |
|
JAN1N5807Semtech |
D MET 6A SFST 50V |
|
1N1203RRoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
1N6545Roving Networks / Microchip Technology |
DIODE RECT ULT FAST REC A-PKG |
|
UJ3D1250KUnitedSiC |
1200V 50A SIC SCHOTTKY DIODE G3, |
|
R7200812XXOOPowerex, Inc. |
DIODE GP 800V 1200A DO200AB |
|
UG2DAFL-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 200V 2A DO221AC |
|
ND171N14KHPSA1IR (Infineon Technologies) |
DIODE GP 1.4KV 104A BG-PB34-1 |
|
LSR106 L0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 1A MELF |
|
JAN1N1206ARRoving Networks / Microchip Technology |
DIODE GEN PURP 600V 12A DO203AA |
|
SS54F-HFComchip Technology |
DIODE SCHOTTKY 5A 40V SMAF |
|
AK 09WKSanken Electric Co., Ltd. |
DIODE SCHOTTKY 90V 700MA AXIAL |