Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
Diode Type: | - |
Voltage - DC Reverse (Vr) (Max): | - |
Current - Average Rectified (Io): | - |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | - |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | - |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
Operating Temperature - Junction: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SS56F-HFComchip Technology |
DIODE SCHOTTKY 5A 60V SMAF |
|
CDLL5819/TRRoving Networks / Microchip Technology |
SCHOTTKY |
|
BYM07-300HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 500MA DO213 |
|
PMEG45A10EPDRochester Electronics |
PMEG45A10EPD - 45 V, 10 A LOW VF |
|
R7003603XXUAPowerex, Inc. |
DIODE GEN PURP 3.6KV 300A DO200 |
|
S3JHM3_A/IVishay General Semiconductor – Diodes Division |
3A 600V SMC STD GPP SM RECT |
|
ES01AV0Sanken Electric Co., Ltd. |
DIODE GEN PURP 600V 700MA AXIAL |
|
MUR2520GeneSiC Semiconductor |
DIODE GEN PURP 200V 25A DO4 |
|
LSM160JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 1A 60V SMAJ |
|
GKN240/12GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 320A DO205 |
|
RURDG15100Rochester Electronics |
ULTRAFAST DIODE |
|
SIDC10D120H8X1SA2IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 15A WAFER |
|
1N4006GR0TSC (Taiwan Semiconductor) |
1A,800V,STD.GLASS PASSIVATED REC |