Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | SMC (DO-214AB) |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N4446TRSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
|
M3035S-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 30A TO220AB |
|
PR1002L-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 1A DO41 |
|
SFS1004G MNGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 10A TO263AB |
|
MBR745HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 7.5A TO220AC |
|
S5BHE3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 5A DO214AB |
|
S1AL RHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A SUB SMA |
|
CD214A-FS1100J.W. Miller / Bourns |
DIODE GEN PURP 100V 1A DO214AC |
|
MBR790 C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 7.5A TO220AC |
|
10BQ030Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 1A SMB |
|
LL4148-13Zetex Semiconductors (Diodes Inc.) |
DIODE GP 75V 150MA MINI MELF |
|
SR220HB0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 2A DO204AC |
|
GP10AHM3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |