CER CAP
IC, ONE CELL, BATTERY PROTECTION
DIODE GEN PURP 150V 1A DO204AL
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950 mV @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 150 V |
Capacitance @ Vr, F: | 22pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
CD214A-B120LLFJ.W. Miller / Bourns |
DIODE SCHOTTKY 20V 1A SMA |
![]() |
NRVBA320T3G-VF01Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 20V 3A SMA |
![]() |
MURS320HE3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
![]() |
S12KCHM6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 12A DO214AB |
![]() |
GP10A-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
![]() |
ES1FL RFGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A SUB SMA |
![]() |
15ETL06SVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A D2PAK |
![]() |
MA3XD1700LPanasonic |
DIODE SCHOTTKY 100V 300MA MINI3 |
![]() |
SF2004GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 20A TO220AB |
![]() |
MBRB10H45HE3/81Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 10A TO263AB |
![]() |
SF12-APMicro Commercial Components (MCC) |
DIODE GPP SUPER FAST 1A DO-41 |
![]() |
JANTX1N3164Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 300A DO205AB |
![]() |
FR151-APMicro Commercial Components (MCC) |
DIODE GPP FAST 1.5A DO-15 |