Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 60 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 630 mV @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 200 µA @ 60 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDH700_T50RSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 20V 150MA DO35 |
|
MA3X704A0LPanasonic |
DIODE SCHOTTKY 30V 30MA MINI3 |
|
1N5399S-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1.5A DO41 |
|
FGP10DHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
MBR340RLSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 3A DO201AD |
|
GP10-4003EHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
FFB06U40STMSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 400V 6A TO263AB |
|
1N916ATRSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
|
FR101GP-TPMicro Commercial Components (MCC) |
DIODE GPP 1A DO-41 |
|
RS1ALHMQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 800MA SUB SMA |
|
SS115LHMTGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 1A SUB SMA |
|
30BQ015Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 15V 3A SMC |
|
SFS1004GHMNGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 10A TO263AB |