DIODE GEN PURP 400V 8A TO220AB
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 400 V |
Capacitance @ Vr, F: | 50pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ES1HR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 1A DO214AC |
|
FM4003Rectron USA |
DIODE GP GLASS 2A 200V SMA |
|
DFLS1100-7-GZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V POWERDI123 |
|
1N5821HB0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 3A DO201AD |
|
SRAF5100HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 5A ITO220AC |
|
1SR124-400AT-82ROHM Semiconductor |
DIODE GEN PURP 400V 1A DO41 |
|
STTH8L06GSTMicroelectronics |
DIODE GEN PURP 600V 8A D2PAK |
|
ER303-APMicro Commercial Components (MCC) |
DIODE GEN PURP 300V 3A DO201AD |
|
MURS120HE3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
|
SRA860 C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 8A TO220AC |
|
MBR730Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 7.5A TO220AC |
|
SF68G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 6A DO201AD |
|
SE40PBHM3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 2.4A TO277A |