DIODE GEN PURP 225V 400MA DO41
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 225 V |
Current - Average Rectified (Io): | 400mA |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 400 mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 200 nA @ 225 V |
Capacitance @ Vr, F: | 11pF @ 12V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RS1GL RFGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 800MA SUBSMA |
|
RL202-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 100V 2A DO15 |
|
VS-8ETL06SPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A D2PAK |
|
S5MHE3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 5A DO214AB |
|
RL204-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 400V 2A DO15 |
|
MA3XD2100LPanasonic |
DIODE SCHOTTKY 15V 1A MINI3 |
|
6A2Micro Commercial Components (MCC) |
DIODE GEN PURP 200V 6A R6 |
|
MBRH15035LGeneSiC Semiconductor |
DIODE SCHOTTKY 35V 150A D-67 |
|
RS3GHE3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
|
SS39HM6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 3A DO214AB |
|
SS10P6HM3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 7A TO277A |
|
GKN26/08GeneSiC Semiconductor |
DIODE GEN PURP 800V 25A DO4 |
|
1N5397GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1.5A DO204AC |