DIODE GEN PURP 35V 100MA DO34
CAP ALUM 1500UF 20% 250V SNAP
Type | Description |
---|---|
Series: | - |
Package: | Cut Tape (CT)Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 35 V |
Current - Average Rectified (Io): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 100 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | 200 µs |
Current - Reverse Leakage @ Vr: | 10 nA @ 30 V |
Capacitance @ Vr, F: | 4pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AG, DO-34, Axial |
Supplier Device Package: | DO34-A1 |
Operating Temperature - Junction: | 200°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
30CPF04Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 30A TO247AC |
|
RS1GL M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 800MA SUBSMA |
|
MA2J11100LPanasonic |
DIODE GEN PURP 80V 100MA SMINI2 |
|
FR301G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 3A DO201AD |
|
SK520C M6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 5A DO214AB |
|
STTH152RLSTMicroelectronics |
DIODE GEN PURP 200V 1.5A DO15 |
|
MBRB1035HE3/81Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 10A TO263AB |
|
VSB1545S-E3/54Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 7A DO201AD |
|
SF1608PTHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 16A TO247AD |
|
VS-HFA25TB60STRRPVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 25A D2PAK |
|
RS1AL RHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 800MA SUB SMA |
|
R4000-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 4KV 200MA DO15 |
|
SF12G R1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO204AL |