DIODE GEN PURP 400V 3A DO214AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 400 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STTH2R02QSTMicroelectronics |
DIODE GEN PURP 200V 2A DO15 |
|
RJU4352SDPD-E0#J2Renesas Electronics America |
DIODE GEN PURP 430V 20A TO252 |
|
SF17G R1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 1A DO204AL |
|
UF5408-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 1KV 3A DO201AD |
|
SS13LHM2GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A SUB SMA |
|
HER602GP-APMicro Commercial Components (MCC) |
DIODE GPP HE 6A R-6 |
|
20ETF08STRRVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 20A D2PAK |
|
1N4448_T50ASanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
|
2A01G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 2A DO204AC |
|
CDBMT280-HFComchip Technology |
DIODE SCHOTTKY 80V 2A SOD123H |
|
SR803HB0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 8A DO201AD |
|
APD245VD-E1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY |
|
1N5060GPHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AC |