DIODE GEN PURP 800V 3A DO214AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 800 V |
Capacitance @ Vr, F: | 50pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SS110L MTGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 1A SUB SMA |
|
12TQ035SVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 15A D2PAK |
|
1N4448_T50RSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
|
SS3H10HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 3A DO214AB |
|
CEFA203-GComchip Technology |
DIODE GEN PURP 200V 2A DO214AC |
|
CEFC304-GComchip Technology |
DIODE GEN PURP 400V 3A DO214AB |
|
GPP15J-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1.5A DO204AC |
|
SF41GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 4A DO201AD |
|
D255N04BXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 400V 255A |
|
MSG106Microsemi |
DIODE SCHOTTKY 60V 1A DO204AL |
|
SS34-7000HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY |
|
CSD04060EWolfspeed - a Cree company |
DIODE SCHOTTKY 600V 4A TO252-2 |
|
1N5391G-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 1.5A DO15 |