IC RF TXRX+MCU ISM>1GHZ 40VFQFN
DIODE GEN PURP 1.2KV 8A TO247AC
CAP CER 0201
Type | Description |
---|---|
Series: | HEXFRED® |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 3.3 V @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 95 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 1200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247AC Modified |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
EGP10CHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A DO204AL |
|
SK810C M6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 8A DO214AB |
|
RFN10B3STLROHM Semiconductor |
DIODE GEN PURP 350V 10A CPD |
|
S3AB-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 3A SMB |
|
DB2460600LPanasonic |
DIODE SCHOTTKY 60V 3A TMINIP2 |
|
1N4001 TRCentral Semiconductor |
DIODE GEN PURPOSE DO41 |
|
ISL9R8120S3STSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 1.2KV 8A TO263 |
|
STTA306B-TRSTMicroelectronics |
DIODE GEN PURP 600V 3A DPAK |
|
SRA2060HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 20A TO220AC |
|
VS-8EWS08STRRPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 8A D-PAK |
|
VS-8ETH03STRRPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A TO263AB |
|
2A02GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO204AC |
|
1N4002GL TRCentral Semiconductor |
DIODE GEN PURP 100V 1A DO41 |