DIODE GEN PURP 300V 10A TO263AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 5 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 1 µA @ 300 V |
Capacitance @ Vr, F: | 50pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB (D²PAK) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDH300_T50RSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 125V 200MA DO35 |
|
HS3B M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
|
MBR7H45-E3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 7.5A TO220AC |
|
1N4004GP-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
RSFDLHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 500MA SUBSMA |
|
FR1B-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 1A SMB |
|
DSK10B-AT1Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 1A AXIAL |
|
1N5818M-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 1A MELF |
|
LL101A-13Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 30MA SOD80 |
|
HFA08TB60STRRVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A D2PAK |
|
STPS30M60DSTMicroelectronics |
DIODE SCHOTTKY 60V 30A TO220AC |
|
RSFBL MTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 500MA SUBSMA |
|
D450S20TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 2KV 443A |