DIODE GEN PURP 800V 6A R6
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 900 mV @ 6 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 µA @ 800 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | R6, Axial |
Supplier Device Package: | R-6 |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
EGP30G-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A GP20 |
|
SS2PH9HE3/85AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 2A DO220AA |
|
FR106-APMicro Commercial Components (MCC) |
DIODE GPP 1A DO-41 |
|
MBR5H150VPB-G1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 150V 5A DO27 |
|
S1DL MQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SUB SMA |
|
D1481N62TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 6.2KV 2200A |
|
FR104G R1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO204AL |
|
SF15-TPMicro Commercial Components (MCC) |
DIODE GPP SUPER FAST 1A DO-41 |
|
HS1FL RHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A SUB SMA |
|
1N5282_T50RSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 80V 200MA DO35 |
|
SRA1640 C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 16A TO220AC |
|
1N4249GP-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
|
MBR5H150VPTR-E1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 150V 5A DO27 |