DIODE GEN PURP 100V 3A DO201AD
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 500 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 100 V |
Capacitance @ Vr, F: | 28pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -50°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SS14HE3/61TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 1A DO214AC |
|
GI914-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
|
SS13L MTGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A SUB SMA |
|
EGP50C-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 5A GP20 |
|
DZ600N08KHPSA1IR (Infineon Technologies) |
RECTIFIER DIODE MOD 1200V 1150A |
|
HS1JL MTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
SS8P2LHM3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 8A TO277A |
|
VS-8EWS08STRPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 8A D-PAK |
|
RGP10KHE3/53Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
|
UH3D-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2.5A DO214AB |
|
MRA4006T3Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 800V 1A SMA |
|
MURB820Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A D2PAK |
|
UH1D-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |