DIODE GP 50V 3A DO201AD
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 500 ns |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | 65pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SR305HB0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 3A DO201AD |
|
FR307GP-APMicro Commercial Components (MCC) |
DIODE GP 1KV 3A DO201AD |
|
AGP15-600HE3/54Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A DO204 |
|
SRAS2060HMNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 20A TO263AB |
|
FM201Rectron USA |
DIODE GEN GLASS 2A 50V SMB |
|
VS-10BQ015TRPBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 15V 1A SMB |
|
RGP10KE-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
|
ES1BLHRTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A SUB SMA |
|
AR3PDHM3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.8A TO277A |
|
FGP50B-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 5A GP20 |
|
BYM07-300HE3/83Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 500MA DO213 |
|
FESE16HT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 16A TO220AC |
|
RSFDL M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 500MA SUBSMA |