







MOSFET N-CH 30V 80A DPAK
ULTRASONIC SENSOR HRXL-MAXSONAR
IC RF TXRX+MCU ISM<1GHZ 64VFQFN
DIODE SCHOTTKY 30V 16A TO220AC
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Obsolete |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 30 V |
| Current - Average Rectified (Io): | 16A |
| Voltage - Forward (Vf) (Max) @ If: | 630 mV @ 16 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 200 µA @ 30 V |
| Capacitance @ Vr, F: | 450pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-2 |
| Supplier Device Package: | TO-220AC |
| Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
VS-15ETX06-1PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO262AA |
|
|
SF35-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 300V 3A DO201AD |
|
|
SRAF10100HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 10A ITO220AC |
|
|
GP10MHM3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
|
|
RL202Rectron USA |
DIODE GEN PURP 1000V 2A DO-15 |
|
|
RS1BHE3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
|
|
SS1H10HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 1A DO214AC |
|
|
HER604GP-TPMicro Commercial Components (MCC) |
DIODE GPP HE 6A R-6 |
|
|
TVR06G-E3/54Vishay General Semiconductor – Diodes Division |
RECTIFIER |
|
|
NUR460P,133WeEn Semiconductors Co., Ltd |
DIODE GEN PURP 600V 4A DO201AD |
|
|
GI822-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 5A P600 |
|
|
MBR7H35HE3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 7.5A TO220AC |
|
|
DB2130300LPanasonic |
DIODE SCHOTTKY 30V 1A SMINI2 |