DIODE GEN PURP 200V 6A P600
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 900 mV @ 6 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.5 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 200 V |
Capacitance @ Vr, F: | 150pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | P600, Axial |
Supplier Device Package: | P600 |
Operating Temperature - Junction: | -50°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HER603GP-APMicro Commercial Components (MCC) |
DIODE GPP HE 6A R-6 |
|
2A03-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 200V 2A DO15 |
|
RS1JLHRHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 800MA SUBSMA |
|
MBRB1635HE3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 16A TO263AB |
|
RS1JLHRVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 800MA SUBSMA |
|
RSFMLHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500MA SUB SMA |
|
VS-STPS1045BTRPBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 10A DPAK |
|
SRA1050HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 10A TO220AC |
|
NRVBM110LT3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 10V 1A POWERMITE |
|
FESE8GT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO220AC |
|
FR3ATASMC Diode Solutions |
DIODE GEN PURP 50V 3A SMC |
|
DSEP8-03AWickmann / Littelfuse |
DIODE GEN PURP 300V 10A TO220AC |
|
RSFALHMTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 500MA SUB SMA |