DIODE GEN PURP 600V 1A DO204AL
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-41 Mini, Axial |
Supplier Device Package: | MSR |
Operating Temperature - Junction: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UF1BHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO204AL |
|
D3001N58TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 5.8KV 3910A |
|
1N5822-AZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 3A DO201AD |
|
IDH05S120AKSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 1200V 5A TO220-2 |
|
STTH40P03STSTMicroelectronics |
DIODE GEN PURP 300V 40A TO220AB |
|
SMD13HE-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 30V 1A SOD123HE |
|
MBR735HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 35V 7.5A TO220AC |
|
EGP30GHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A GP20 |
|
SF38G-APMicro Commercial Components (MCC) |
DIODE GPP HE 3A DO-201AD |
|
VS-20ETS12PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220AC |
|
60HFUR-500Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 60A DO203AB |
|
MUR260Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 2A AXIAL |
|
HER201-APMicro Commercial Components (MCC) |
DIODE GPP HE 2A DO-15 |