CAP CER 0.015UF 100V C0G 1812
DIODE GEN PURP 75V 1A AXIAL
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 875 mV @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 25 ns |
Current - Reverse Leakage @ Vr: | 1 µA @ 75 V |
Capacitance @ Vr, F: | 25pF @ 10V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | A, Axial |
Supplier Device Package: | - |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
GPA803HC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 8A TO220AC |
|
FR107TASMC Diode Solutions |
DIODE GEN PURP 1KV 1A DO41 |
|
BA157G R1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO204AL |
|
1N5818 B0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A DO204AL |
|
1N4937LZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 1A DO41 |
|
GI826-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 5A P600 |
|
MBR790HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 7.5A TO220AC |
|
VS-20ETF06STRLPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 20A D2PAK |
|
BAT43X RKGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 200MA SOD523F |
|
DB2X60300LPanasonic |
DIODE SCHOTTKY 60V 500MA SOD123 |
|
AR4PGHM3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 2A TO277A |
|
SRAF550 C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 5A ITO220AC |
|
RSFAL MQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 500MA SUB SMA |