DIODE SC SCHOTKY 1200V 15A TO220
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 15A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 15 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 375 µA @ 1200 V |
Capacitance @ Vr, F: | 750pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BYW27-200GPHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
D770N12TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 770A |
|
BYD13DGP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
BY500-800-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 5A DO201AD |
|
CD214B-B130LFJ.W. Miller / Bourns |
DIODE SCHOTTKY 30V 1A DO214AA |
|
TRS10E65C,S1QToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 650V 10A TO220-2L |
|
VS-8TQ100PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 8A TO220AC |
|
1N4003GL-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 200V 1A DO41 |
|
SRAF1620HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 16A ITO220AC |
|
MA3S79500LPanasonic |
DIODE SCHOTTKY 30V 30MA SSMINI3 |
|
MA3S132AGLPanasonic |
DIODE GEN PURP 80V 100MA SSMINI3 |
|
S1BL M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A SUB SMA |
|
S1ALHMQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A SUB SMA |