DIODE GEN PURP 50V 1A SUB SMA
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.8 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 50 V |
Capacitance @ Vr, F: | 9pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
MP738-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
![]() |
MMSD914T3Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 200MA SOD123 |
![]() |
SB590-TZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 90V 5A DO201AD |
![]() |
SR1204HB0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 12A DO201AD |
![]() |
EC8FS6KYOCERA Corporation |
DIODE FAST RECOVERY 600V 0.8A D |
![]() |
SF10JG-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 1A DO41 |
![]() |
BAS21E6359HTMA1IR (Infineon Technologies) |
DIODE GP 200V 250MA SOT23-3 |
![]() |
CD1005-S01575J.W. Miller / Bourns |
DIODE GEN PURP 75V 150MA 1005 |
![]() |
VS-20ETS08SPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 20A TO263AB |
![]() |
MBRB7H35-E3/81Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 7.5A TO263AB |
![]() |
RS1PDHE3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO220AA |
![]() |
VS-8ETH06STRLPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
![]() |
S5BHE3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 5A DO214AB |