CAP CER 0.022UF 10V X7R 1808
DIODE GPP SUPER FAST 2A DO-15
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-15, Axial |
Supplier Device Package: | DO-15 |
Operating Temperature - Junction: | -55°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
MBRB750HE3_A/PVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 7.5A TO263AB |
![]() |
CURM105-GComchip Technology |
DIODE GEN PURP 600V 1A MINISMA |
![]() |
SF38GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO201AD |
![]() |
BY229X-800-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 8A ITO220AC |
![]() |
BAV19_T50RSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 120V 200MA DO35 |
![]() |
ES3CHM6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 3A DO214AB |
![]() |
MBR10H100HE3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 10A TO220AC |
![]() |
MUR460-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 4A DO201AD |
![]() |
VS-10ETF12STRLPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 10A TO263AB |
![]() |
EGP20CHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 2A DO204AC |
![]() |
SFS1001G MNGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 10A TO263AB |
![]() |
SS24L M2GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 2A SUB SMA |
![]() |
VS-50SQ060TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 5A DO204AR |