CAP CER 180PF 250V X7R 2211
DIODE GEN PURP 300V 8A TO220AC
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 300 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N459A_T50RSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 500MA DO35 |
|
MA2C16700EPanasonic |
DIODE GEN PURP 75V 100MA DO34 |
|
RGP20GHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2A GP20 |
|
SS5P6-E3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 5A TO277A |
|
SR303 B0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 3A DO201AD |
|
S1KA-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO214AC |
|
BYS10-25HE3/TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 25V 1.5A DO214AC |
|
SF1607GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 16A TO220AB |
|
GI828-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 5A P600 |
|
SB340F055Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 3A DO201AD |
|
ESH1DHE3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
SF1007GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 10A TO220AB |
|
SFAF801GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 8A ITO220AC |