DIODE GEN PURP 600V 10A ITO220AC
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 10 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Capacitance @ Vr, F: | 140pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | ITO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
GPA806 C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 8A TO220AC |
|
GP30MHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
|
S15GCHM6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 15A DO214AB |
|
SR320 B0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 3A DO201AD |
|
S5BC-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 5A SMC |
|
1N6675Roving Networks / Microchip Technology |
DIODE SCHOTTKY 20V 200MA DO35 |
|
HER157-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 800V 1.5A DO15 |
|
BYD77B,115NXP Semiconductors |
DIODE AVALANCHE 100V 850MA MELF |
|
S5GHE3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 5A DO214AB |
|
BY329X-1500,127NXP Semiconductors |
DIODE GEN PURP 1.5KV 6A TO220F |
|
SS15L RHGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 1A SUB SMA |
|
CN647 TRCentral Semiconductor |
DIODE GP 400V 400MA DO-41SP |
|
GPA806HC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 8A TO220AC |