DIODE GEN PURP 600V 1A DO220AA
Type | Description |
---|---|
Series: | eSMP® |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.8 µs |
Current - Reverse Leakage @ Vr: | 1 µA @ 600 V |
Capacitance @ Vr, F: | 6pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-220AA |
Supplier Device Package: | DO-220AA (SMP) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
S1GL RFGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A SUB SMA |
|
ES1FL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A SUB SMA |
|
HS1ML RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A SUB SMA |
|
VS-31DQ09GTRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 3.3A C16 |
|
S1M-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1A SMA |
|
HFA04SD60SVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A DPAK |
|
RS1BL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 800MA SUBSMA |
|
HS1FL M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A SUB SMA |
|
SS210HE3/52TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 1.5A DO214AA |
|
SS2P2L-E3/85AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 2A DO220AA |
|
RS3KHE3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 3A DO214AB |
|
FR602GP-TPMicro Commercial Components (MCC) |
DIODE GPP FAST 6A R-6 |
|
1N4006GP-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |