DIODE GEN PURP 500V 10A TO220AC
RF ATTENUATOR 31.5DB 50OHM 20QFN
WIRE MARKER PUSH ON 4.5MM WHITE
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 500 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 10 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 500 V |
Capacitance @ Vr, F: | 50pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
VS-30EPF12PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
![]() |
ESH1PA-E3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO220AA |
![]() |
MUR120GP-APMicro Commercial Components (MCC) |
DIODE GPP SUPER FAST 1A DO-41 |
![]() |
SS110L MQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 1A SUB SMA |
![]() |
GB10SLT12-220GeneSiC Semiconductor |
DIODE SCHOTTKY 1200V 10A TO220AC |
![]() |
GP10GEHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
![]() |
GP10-4005EHM3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 1A DO204AL |
![]() |
RJU6052SDPD-E0#J2Renesas Electronics America |
DIODE GEN PURP 600V 20A TO252 |
![]() |
SS19-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 1A 90V DO-214AC |
![]() |
HER156-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 1.5A DO15 |
![]() |
SD103C-A-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 20V 350MA DO35 |
![]() |
SS10PH45HM3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 10A TO277A |
![]() |
D5810N02TVFXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 200V 5800A |