DIODE GEN PURP 1000V 10A R-6
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 10 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 µA @ 1000 V |
Capacitance @ Vr, F: | 135pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | R-6, Axial |
Supplier Device Package: | R-6 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RS1GLHMHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 800MA SUBSMA |
|
DSI17-08AWickmann / Littelfuse |
DIODE AVALANCHE 800V 25A DO203AA |
|
UES2602Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 30A TO204AA |
|
MBRF2035HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 35V 20A ITO220AC |
|
S5JC-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 5A SMC |
|
S4B M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 4A DO214AB |
|
10ETF10FPVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 10A TO220FP |
|
BY252GPHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
|
SF36-TPMicro Commercial Components (MCC) |
DIODE GPP HE 3A DO-201AD |
|
FR307-APMicro Commercial Components (MCC) |
DIODE GP 50V 3A DO201AD |
|
CEFA103-GComchip Technology |
DIODE GEN PURP 200V 1A DO214AC |
|
FR155-TPMicro Commercial Components (MCC) |
DIODE GPP FAST DO-15 |
|
MURA260T3Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 2A SMA |