Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 580 mV @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 100 µA @ 50 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-30APF04PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 400V 30A TO247AC |
|
EGP10G-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 400V 1A DO41 |
|
R1500-APMicro Commercial Components (MCC) |
DIODE GEN PURP 1.5KV 500MA DO41 |
|
UF3005-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 3A DO201AD |
|
FR153S-APMicro Commercial Components (MCC) |
DIODE GPP FAST 1.5A DO-41 |
|
EGL34BHE3/83Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
|
RS1BLHMQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 800MA SUBSMA |
|
SF64GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 6A DO201AD |
|
VS-1EFH02W-M3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A SMF |
|
ES1JLHMQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
VS-MBRB735TRRPBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 7.5A D2PAK |
|
SK85CHM6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 8A DO214AB |
|
SB340S-E3/54Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 3A DO204AC |