DIODE SCHOTTKY 30V 2A SUB SMA
10/100/1000BASE-T LAN XFMR POE+
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 500 mV @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 400 µA @ 30 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PMEG3010ESBZNexperia |
DIODE SCHOTTKY 30V 1A DSN1006-2 |
|
MURS105T3Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 50V 2A SMB |
|
RGP10JE-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
IDH06SG60CXKSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 600V 6A TO220-2 |
|
RS1DHE3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
RS1DL M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 800MA SUBSMA |
|
SR104 R1GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 1A DO204AL |
|
RL205-APMicro Commercial Components (MCC) |
DIODE GEN PURP 50V 2A DO15 |
|
SF25G-APMicro Commercial Components (MCC) |
DIODE GPP SUPER FAST 2A DO-15 |
|
S1JA-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
|
RS1G-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 400V 1A SMA |
|
JANTX1N1614Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 15A DO203AA |
|
1N914_S00ZSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |