DIODE GEN PURPOSE
EXTRUSION, FRONT: 8.0" L, 200 BD
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 400 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RGP25MHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 2.5A DO201 |
|
VS-8EWS10SPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 8A DPAK |
|
2A03G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO204AC |
|
SF28G-TPMicro Commercial Components (MCC) |
DIODE GPP SUPER FAST 2A DO-15 |
|
RS1PBHE3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
|
MB10H90HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 10A TO263AB |
|
SF3005PTHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 30A TO247AD |
|
UPS5100HE3Microsemi |
DIODE SCHOTTKY 100V 5A POWERMITE |
|
R5000-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 5KV 200MA DO15 |
|
HS1BL RHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A SUB SMA |
|
6A05Micro Commercial Components (MCC) |
DIODE GEN PURP 50V 6A R6 |
|
UG2DHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO204AC |
|
MBR5200VPTR-E1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 200V 5A DO27 |