DIODE GEN PURP 600V 30A D2PAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 1.55 V @ 30 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Operating Temperature - Junction: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CEFC305-GComchip Technology |
DIODE GEN PURP 600V 3A DO214AB |
|
SRAF1630HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 16A ITO220AC |
|
SL42HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 4A DO214AB |
|
VS-18TQ040PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 18A TO220AC |
|
1N4937GP-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
SE40PDHM3/86AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2.4A TO277A |
|
UH6PJ-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A TO277A |
|
MA2S10100LPanasonic |
DIODE GP 250V 100MA SSMINI2-F1 |
|
MUR115GP-APMicro Commercial Components (MCC) |
DIODE GPP SUPER FAST 1A DO-41 |
|
1N4007GPEHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
|
2A6Rectron USA |
DIODE 1A 800V SOD-123F |
|
UGB5HT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 5A TO263AB |
|
20ETF02Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 20A TO220AC |