DIODE GEN PURP 400V 30A DOP3I
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 1.45 V @ 30 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 100 ns |
Current - Reverse Leakage @ Vr: | 15 µA @ 400 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DOP3I-2 Insulated (Straight Leads) |
Supplier Device Package: | DOP3I |
Operating Temperature - Junction: | -40°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SS24HE3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AA |
|
SK34E3/TR13Microsemi |
DIODE SCHOTTKY 40V 3A DO214AB |
|
GPP100MS-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 10A P600 |
|
30WQ04FNVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 3.5A DPAK |
|
10A05-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 10A R6 |
|
VS-8EWF06STRPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
|
RSFDL RFGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 500MA SUBSMA |
|
LSIC2SD065A06Wickmann / Littelfuse |
GEN 2 SIC SBD |
|
VS-11DQ03TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 1.1A DO204AL |
|
VSB15L45-M3/73Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 7A P600 |
|
JANTXV1N6640USMetelics (MACOM Technology Solutions) |
DIODE GEN PURP 50V 300MA D-5D |
|
V12P12-5001M3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 12A TO277A |
|
MUR310S M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |