Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -55°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
EGP10CE-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A DO204AL |
|
VS-APU6006L-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 60A TO247-3 |
|
STTA406STMicroelectronics |
DIODE GEN PURP 600V 4A DO201AD |
|
FGP10BHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
RSFGLHMHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 500MA SUBSMA |
|
50WQ06FNTRLVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 5.5A DPAK |
|
MBRM110LT3Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 10V 1A POWERMITE |
|
SFF2007GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 20A ITO220AB |
|
SS19LHM2GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 1A SUB SMA |
|
GPA806DT-TPMicro Commercial Components (MCC) |
DIODE GPP 8A D2PAK |
|
1N5062GPHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AC |
|
MA22D1500LPanasonic |
DIODE SCHOTTKY 20V 1A MINI2 |
|
CD214B-F3100J.W. Miller / Bourns |
DIODE GEN PURP 100V 3A SMB |