DIODE GEN PURP 600V 2A DO15
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-15, Axial |
Supplier Device Package: | DO-15 |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
10ETF10STRRVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 10A D2PAK |
|
MPG06DHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A MPG06 |
|
DA3X101K0LPanasonic |
DIODE GEN PURP 80V 100MA MINI3 |
|
LSM545JMicrosemi |
DIODE SCHOTTKY 45V 5A DO214AB |
|
UH5JT-E3/4WVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
|
STTH1210G-TRSTMicroelectronics |
DIODE GEN PURP 1KV 12A D2PAK |
|
ES3HR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 3A DO214AB |
|
SS12L MHGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 1A SUB SMA |
|
SR504-TZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 5A DO201AD |
|
GP10YHM3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 1A DO204AL |
|
MS108/TR8Microsemi |
DIODE SCHOTTKY 80V 1A DO204AL |
|
B1100B-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V 1A SMB |
|
1N4153Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 75V 200MA DO35 |