TVS DIODE 140V 226.8V DO214AB
DIODE GEN PURP 1000V 10A R-6
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 10 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 µA @ 1000 V |
Capacitance @ Vr, F: | 135pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | R-6, Axial |
Supplier Device Package: | R-6 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FGP20C-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 2A DO204AC |
|
1N914BTR_S00ZSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
|
SS1P6L-E3/85AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 1A DO220AA |
|
GP02-25HM3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2.5KV 250MA DO204 |
|
BAT54A_L99ZSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOT23 |
|
1N4935GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO204AL |
|
VS-MBRB1045TRRPBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 10A 45V D2PAK |
|
HFA08SD60SVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A DPAK |
|
VS-HFA06TB120PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 6A TO220AC |
|
HS1DL MTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SUB SMA |
|
ES1D-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 200V 1A SMA |
|
6A10GRectron USA |
DIODE GEN PURP 1000V 6A R-6 |
|
B360-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 60V 3A SMC |