DIODE SCHOTTKY 1.2KV 5A TO220-2
Type | Description |
---|---|
Series: | Zero Recovery™ |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 17.5A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 5 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 200 µA @ 1200 V |
Capacitance @ Vr, F: | 455pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FR306GP-APMicro Commercial Components (MCC) |
DIODE GP 800V 3A DO201AD |
|
HER201G-TPMicro Commercial Components (MCC) |
DIODE GPP HE 2A DO-15 |
|
SSA34HE3/61TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 3A DO214AC |
|
1N4002G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO204AL |
|
SK59C M6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 5A DO214AB |
|
UH2CHE3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
|
RSFGL RFGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 500MA SUBSMA |
|
SR810 B0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 8A DO201AD |
|
UGE8HT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 8A TO220AC |
|
SF47G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 4A DO201AD |
|
HS5D M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 5A DO214AB |
|
STTA512BSTMicroelectronics |
DIODE GEN PURP 1.2KV 5A DPAK |
|
SB360S-E3/54Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 3A DO204AC |