DIODE GEN PURP 600V 1A DO204AL
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 200 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
JANTX1N1184Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 35A DO5 |
|
R4000F-APMicro Commercial Components (MCC) |
DIODE GEN PURP 4KV 200MA DO15 |
|
STPS30SM60STSTMicroelectronics |
DIODE SCHOTTKY 60V 30A TO220AB |
|
SF1604GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 16A TO220AB |
|
SS3P4LHM3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 3A TO277A |
|
ES1DLHRTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SUB SMA |
|
SB10-05A3-AT1Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 50V 1A DO41 |
|
VS-8ETX06STRRPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
|
DL4934-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 1A MELF |
|
RL202GP-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 100V 2A DO15 |
|
STTA506B-TRSTMicroelectronics |
DIODE GEN PURP 600V 5A DPAK |
|
MA2Z72000LPanasonic |
DIODE SCHOTTKY 40V 500MA SMINI2 |
|
VS-65PQ015PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 15V 65A TO247AC |