DIODE GEN PURP 200V 8A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 140 ns |
Current - Reverse Leakage @ Vr: | 100 µA @ 200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SS26LHRFGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 2A SUB SMA |
|
SK12-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 20V 1A SMB |
|
VS-HFA25TB60-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 25A TO220AC |
|
MBRS1690HMNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 16A TO263AB |
|
MBRB1645HE3/81Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 16A TO263AB |
|
BY229B-400-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO263AB |
|
BY133-APMicro Commercial Components (MCC) |
DIODE GPP 1A DO-41 |
|
SRAS860 MNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 8A TO263AB |
|
JAN1N6625UMicrosemi |
DIODE GEN PURP 1KV 1A A-MELF |
|
SS13LHRHGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A SUB SMA |
|
ES1AHE3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |
|
D690S20TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 2KV 690A |
|
MBRM110ET1Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 10V 1A POWERMITE |